MC34164-3 datasheet(8/23 Pages) FREESCALE

tên linh kiện	MC34164-3

Giải thích chi tiết về linh kiện	3.0 A 1.0 MHz Fully Integrated DDR Switch-Mode Power Supply

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Analog Integrated Circuit Device Data

8

Freescale Semiconductor

34712

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

M2 RDS(ON)

(VIN = 3.3 V, M2 is on)

RDS(ON)M2

1.5

-

4.0

Ω

PVIN Pin Leakage Current

(Standby and Shutdown Modes)

IPVIN

-10

-

10

µA

INV Pin Leakage Current

IINV

-1.0

-

1.0

µA

Thermal Shutdown Threshold (16)

TSDFET

-

170

-

°C

Thermal Shutdown Hysteresis (16)

TSDHYFET

-

25

-

°C

OSCILLATOR (FREQ)

Oscillator Frequency Adjusting Reference Voltage Range

VFREQ

0.0

-

VDDI

V

TRACKING (VREFIN, VREFOUT, VOUT)

VREFIN External Reference Voltage Range (16)

VREFIN

0.0

-

2.7

V

VREFOUT Buffered Reference Voltage Range

VREFOUT

0.0

-

1.35

V

VREFOUT Buffered Reference Voltage Accuracy (17)

-

-1.0

-

1.0

%

VREFOUT Buffered Reference Voltage Current Capability

IREFOUT

0.0

-

8.0

mA

VREFOUT Buffered Reference Voltage Over Current Limit

IREFOUTLIM

-

11

-

mA

VREFOUT Total Discharge Resistance(16)

RTDR(M6)

-

50

-

Ω

VOUT Total Discharge Resistance (16)

RTDR(M5)

-

50

-

Ω

VOUT Pin Leakage Current

(Standby Mode, VOUT = 3.6 V)

IVOUTLKG

-1.0

-

1.0

µA

CONTROL AND SUPERVISORY (STBY, SD, PG)

STBY High Level Input Voltage

VSTBYHI

2.0

-

V

STBY Low Level Input Voltage

VSTBYLO

-

0.4

V

STBY Pin Internal Pull Up Resistor

RSTBYUP

1.0

-

2.0

M

Ω

SD High Level Input Voltage

VSDHI

2.0

-

V

SD Low Level Input Voltage

VSDLO

-

0.4

V

SD Pin Internal Pull Up Resistor

RSDUP

1.0

-

2.0

M

Ω

PG Low Level Output Voltage

(IPG = 3.0 mA)

VPGLO

-

0.4

V

PG Pin Leakage Current

(M1 is off, Pulled up to VIN)

IPGLKG

-1.0

-

1.0

µA

Notes

16.

Design information only, this parameter is not production tested.

17.

The 1 % accuracy is only guaranteed for VREFOUT greater than or equal to 0.7 V at room temperature.

Table 3. Static Electrical Characteristics

Characteristics noted under conditions 3.0 V

≤ V

IN ≤ 6.0 V, -40°C ≤ T

A ≤ 85°C, GND = 0 V unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

Số phần tương tự - MC34164-3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Microsemi Corporation	MC34164-3	126Kb / 9P	3V UNDERVOLTAGE SENSING CIRCUIT
Microsemi Corporation	MC34164-3	277Kb / 9P	3V UNDERVOLTAGE SENSING CIRCUIT
List of Unclassifed Man...	MC34164-3	278Kb / 9P	3V UNDERVOLTAGE SENSING CIRCUIT
Microsemi Corporation	MC34164-3DM	126Kb / 9P	3V UNDERVOLTAGE SENSING CIRCUIT
List of Unclassifed Man...	MC34164-3DM	278Kb / 9P	3V UNDERVOLTAGE SENSING CIRCUIT

More results

Mô tả tương tự - MC34164-3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Freescale Semiconductor...	MC34712	547Kb / 24P	3.0 A 1.0 MHz Fully Integrated DDR Switch-Mode Power Supply
NXP Semiconductors	KT34712UG	2Mb / 16P	Using the 3.0 A 1.0 MHz Fully Integrated DDR Switch-Mode Power Supply Rev. 4.0, 1/2009
Freescale Semiconductor...	MC34717	778Kb / 28P	5.0 A 1.0 MHz Fully Integrated Dual Switch-Mode Power Supply
	MC34713	587Kb / 23P	5.0 A 1.0 MHz Fully Integrated Single Switch-Mode Power Supply
	34717	651Kb / 25P	5.0 A 1.0 MHz Fully Integrated Dual Switch-Mode Dual Switch-Mode Power Supply
NXP Semiconductors	KT34717UG	1Mb / 20P	Using the 5.0 A 1.0 MHz Fully Integrated Dual Switch-Mode Power Supply Rev. 3.0, 1/2009
Freescale Semiconductor...	MC34716	772Kb / 27P	1.0 MHz Dual Switch-Mode DDR Power Supply
	34716	664Kb / 25P	1.0 MHz Dual Switch-Mode DDR Power Supply
	34712	477Kb / 23P	3.0A 1.0MHz Fully Integrated DDR Switch-Mode Power Supply
NXP Semiconductors	KT34716UG	1,005Kb / 17P	Using the 1.0 MHz Dual Switch-Mode DDR Power Supply Rev. 3.0, 1/2009

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