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BU1006A-E351 bảng dữ liệu(PDF) 1 Page - Vishay Siliconix

tên linh kiện BU1006A-E351
Giải thích chi tiết về linh kiện  Enhanced Power Bridge Rectifiers
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New Product
BU1006A thru BU1010A
Vishay General Semiconductor
Document Number: 84800
Revision: 11-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Enhanced Power Bridge Rectifiers
FEATURES
• UL recognition file number E309391
(QQQX2) UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option (part
number with “5S” suffix, e.g. BU1006A5S)
• Superior thermal conductivity
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification
for
switching
power
supply,
home
appliances and white-goods applications.
MECHANICAL DATA
Case: BU
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
* Tested to UL standard for safety electrically isolated semiconductor
devices. UL 1557 4th edition.
Dielectric
tested
to
maximum
case,
storage
and
junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94V-0 flammability rating.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
600 V, 800 V, 1000 V
IFSM
90 A
IR
5 µA
VF at IF = 5 A
0.94 V
TJ max.
150 °C
+
~
~
-
-
~
~
+
Case Style BU
+
~~
-
PowerBridgeTM
Notes:
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1006A
BU1008A
BU1010A
UNIT
Maximum repetitive peak reverse voltage
VRRM
600
800
1000
V
Average rectified forward current (Fig. 1, 2)
TC = 90 °C
(1)
TA = 25 °C
(2)
IO
10
3.0
A
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
IFSM
90
A
Rating for fusing (t < 8.3 ms) TJ = 25 °C
I2t
33
A2s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C


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