BUK7610-55AL_08 datasheet(1/13 Pages) PHILIPS

tên linh kiện	BUK7610-55AL

Giải thích chi tiết về linh kiện	N-channel TrenchMOS standard level FET

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1.

Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized

for linear operation. This product has been designed and qualified to the appropriate AEC

standard for use in automotive critical applications.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1]

Continuous current is limited by package.

BUK7610-55AL

N-channel TrenchMOS standard level FET

Rev. 02 — 9 January 2008

Product data sheet

175

°C rated

Q101 compliant

Stable operation in linear mode

TrenchMOS technology

12 V and 24 V loads

Automotive systems

DC linear motor control

Repetitive clamped inductive switching

Table 1.

Quick reference

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ID

drain current

VGS =10 V; Tmb =25 °C;

see Figure 4 and 1

[1] --

75

A

Ptot

total power dissipation

Tmb =25 °C; see Figure 2

-

300

W

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =75A; Vsup ≤ 55 V;

RGS =50 Ω; VGS =10V;

Tj(init) =25 °C; unclamped

inductive load

--

1.1

J

Static characteristics

RDSon

drain-source on-state

resistance

VGS =10 V; ID =25A;

Tj =25 °C; see Figure 12 and

13

-8.5

10

m

Ω

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NXP Semiconductors	BUK7610-55AL	203Kb / 13P	N-channel TrenchMOS standard level FET Rev. 02-9 January 2008

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