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STPS1150A bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Power Schottky rectifier
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STPS1150A bảng dữ liệu(HTML) 3 Page - STMicroelectronics

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STPS1150
Characteristics
3/7
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Figure 5.
Non repetitive surge peak
forward current versus overload
duration - maximum values (SMA)
Figure 6.
Non repetitive surge peak forward
current versus overload duration
- maximum values (DO-41)
I (A)
M
0
1
2
3
4
5
6
7
8
1.E-03
1.E-02
1.E-01
1.E+00
T =25°C
a
T =75°C
a
T =125°C
a
IM
t
δ=0.5
t(s)
SMA
0
1
2
3
4
5
6
7
8
1.E-03
1.E-02
1.E-01
1.E+00
I (A)
M
T =25°C
a
T =75°C
a
T =125°C
a
IM
t
δ=0.5
t(s)
DO-41
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration - epoxy
printed circuit board, eCu = 35 µm,
recommended pad layout (SMA)
Figure 8.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-41)
Z/R
th(j-a)
th(j-a)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ=tp/T
tp
t (s)
p
SMA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z/R
th(j-a)
th(j-a)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ=tp/T
tp
t (s)
p
DO-41


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