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STGF8NC60KD
Electrical ratings
3/14
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC
(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at TC = 25°C
7A
IC
(1)
Collector current (continuous) at TC = 100°C
4A
ICP
(2)
2.
Pulse width limited by max junction temperature
Pulsed collector current
30
A
VGE
Gate-emitter voltage
±20
V
IF
Diode RMS forward current at Tc=25°C
7
A
IFSM
Surge not repetitive forward current tp = 10ms sinusoidal
20
A
VISO
Insulation withstand voltage (RMS) from all three leads
to external heat sink (t=1s;TC=25°C)
2500
V
PTOT
Total dissipation at TC = 25°C
24
W
Tj
Operating junction temperature
– 55 to 150
°C
Tscw
Short circuit withstand time
10
µs
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max IGBT
5.1
°C/W
Rthj-case
Thermal resistance junction-case max diode
7
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
62.5
°C/W
I
C
T
C
()
T
JMAX
T
C
R
THJ
C
V
CESAT MAX
()
T
C
I
C
,
()
×
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=


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