STP20NM50FD datasheet(3/11 Pages) STMICROELECTRONICS

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STP20NM50FD - STF20NM50D - STB20NM50FD

ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS >ID(on) xRDS(on)max,

ID = 10A

9S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

1380

290

40

pF

Coss eq. (2)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 400V

130

pF

Rg

Gate Input Resistance

f=1 MHz Gate DC Bias=0

Test Signal Level=20mV

Open Drain

2.8

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD =250V, ID =10 A

RG = 4.7Ω VGS =10V

(see test circuit, Figure 3)

22

ns

tr

Rise Time

20

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =400V, ID = 20A,

VGS =10V

38

18

10

53

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 400V, ID =20A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

6ns

tf

Fall Time

15

ns

tc

Cross-over Time

30

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

20

A

ISDM (2)

Source-drain Current (pulsed)

80

A

VSD (1)

Forward On Voltage

ISD =20A,VGS =0

1.5

V

trr

Reverse Recovery Time

ISD = 20 A, di/dt = 100A/µs,

VDD =60V, Tj = 150°C

(see test circuit, Figure 5)

245

ns

Qrr

Reverse Recovery Charge

2

µC

IRRM

Reverse Recovery Current

16

A

Số phần tương tự - STP20NM50FD

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