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2N2222 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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1 / 5 page 2N2218-2N2219 2N2221-2N2222 January 1989 HIGH-SPEED SWITCHES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit VCBO Collector-base Voltage (IE =0) 60 V VCEO Collector-emitter Voltage (IB =0) 30 V VEBO Emitter-base Voltage (I C =0) 5 V I C Collector Current 0.8 A Pto t Total Power Dissipation at T amb ≤ 25 °C for 2N2218 and 2 N22 19 for 2N2221 and 2 N22 22 at T cas e ≤ 25 °C for 2N2218 and 2 N22 19 for 2N2221 and 2 N22 22 0.8 0.5 3 1.8 W W W W T stg Storage Temperature – 65 to 200 °C T j Junction Temperature 175 °C DESCRIPTION TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM 2N2218/2N2219 approved to CECC 50002- 100, 2N2221/2N2222 approved to CECC 50002-101 available on request. The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of collector cur- rent, low leakage currents and low saturation volt- ages. 1/5 |
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