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October 2007
Rev 3
1/18
18
STD11NM60N-1 - STB11NM60N-1
STD11NM60N-STP11NM60N-STF11NM60N
N-channel 600V - 0.37
Ω - 10A - TO-220/FP- I/I2PAK - DPAK
second generation MDmesh™ Power MOSFET
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
Figure 1.
Internal schematic diagram
Type
VDSS
(@TJmax)
RDS(on)
ID
STB11NM60N-1
650 V
< 0.45
10 A
STD11NM60N
650 V
< 0.45
10 A
STD11NM60N-1
650 V
< 0.45
10 A
STF11NM60N
650 V
< 0.45
10 A(1)
1.
Limited only by maximum temperature allowed
STP11NM60N
650 V
< 0.45
10 A
TO-220
TO-220FP
DPAK
IPAK
1
2
3
1
2
3
1
3
3
2
1
1
2
3
I²PAK
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB11NM60N-1
B11NM60N
I²PAK
Tube
STD11NM60N-1
D11NM60N
IPAK
Tube
STD11NM60N
D11NM60N
DPAK
Tape & reel
STP11NM60N
P11NM60N
TO-220
Tube
STF11NM60N
F11NM60N
TO-220FP
Tube
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