JDH3D01S

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

JDH3D01S

○

For wave detection

Small package

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Marking

Caution

This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and

other objects that come into direct contact with the product should be made of antistatic materials.

Unit: mm

1 ｱﾉｰﾄﾞ 1

2 ｶｿｰﾄﾞ 2

3 ｶｿｰﾄﾞ 1/ｱﾉｰﾄﾞ 2

JEDEC

―

JEITA

―

TOSHIBA

1-2S1C

Characteristic

Symbol

Rating

Unit

Reverse voltage

4

V

Forward current

25

mA

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

⎯

0.25

⎯

V

Forward current

25

⎯

⎯

mA

Reverse current

⎯

⎯

25

uA

Capacitance

⎯

0.6

⎯

pF

B H

Weight:0.0024g(typ.)

SSM 1. ANODE1

2. CATHODE2

3. CATHODE1/ANODE2