nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
Toshiba Semiconductor |
JDH3D01S
|
168Kb / 4P |
Diode Silicon Epitaxial Schottky Barrier Type For wave detection
|
DSF05S30U
|
183Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSF07S30U
|
186Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSR07S30U
|
188Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSR05S30CTB
|
179Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSF05S30CTB
|
178Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
JDH2S01T
|
70Kb / 2P |
Diode Silicon Epitaxial Schottky Barrier Type
|
DSR05S30U
|
184Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
KEC(Korea Electronics) |
KDR322
|
351Kb / 2P |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
|
Renesas Technology Corp |
HSC285
|
46Kb / 5P |
SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION
|