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1SV280 bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor |
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1SV280 bảng dữ liệu(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SV280 2007-11-01 1 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV280 VCO for UHF Band Radio • High capacitance ratio: C2 V/C10 V = 2.4 (typ.) • Low series resistance: rs = 0.44 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 μA 15 ⎯ ⎯ V Reverse current IR VR = 15 V ⎯ ⎯ 3 nA Capacitance C2 V VR = 2 V, f = 1 MHz 3.8 ⎯ 4.7 pF Capacitance C10 V VR = 10 V, f = 1 MHz 1.5 ⎯ 2.0 pF Capacitance ratio C2 V/C10 V ⎯ 2.0 2.4 ⎯ ⎯ Series resistance rs VR = 1 V, f = 470 MHz ⎯ 0.44 0.6 Ω Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) |
Số phần tương tự - 1SV280_07 |
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Mô tả tương tự - 1SV280_07 |
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