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STP8NM50 - STP8NM50FP
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
8
8 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
5
5 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
32
32 (1)
A
PTOT
Total dissipation at TC = 25°C
100
25
W
Derating factor
0.8
W/°C
dv/dt(3)
3.
ISD ≤8 A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
--
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-65 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
TO-220
TO-220FP
Unit
Rthj-case
Thermal resistance junction-case max
1.25
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAR, VDD= 50V)
200
mJ


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