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2SJ676 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor

tên linh kiện 2SJ676
Giải thích chi tiết về linh kiện  Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications
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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
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2SJ676
2006-11-17
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = −200 V, VGS = 0 V
−100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−200
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−1.5
−3.5
V
Drain−source ON-resistance
RDS (ON)
VGS = −10 V, ID = −1.5 A
1.6
2.0
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −1.5 A
1.0
2.0
S
Input capacitance
Ciss
410
Reverse transfer capacitance
Crss
40
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
145
pF
Rise time
tr
20
Turn−on time
ton
45
Fall time
tf
15
Switching time
Turn−off time
toff
85
ns
Total gate charge (gate−source
plus gate−drain)
Qg
10
Gate−source charge
Qgs
6
Gate−drain (“Miller”) charge
Qgd
VDD ≈ −160 V, VGS = −10 V, ID = −2.5 A
4
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−2.5
A
Pulse drain reverse current
(Note 1)
IDRP
−10
A
Forward voltage (diode)
VDSF
IDR = −2.5 A, VGS = 0 V
2.0
V
Reverse recovery time
trr
135
ns
Reverse recovery charge
Qrr
IDR = −2.5 A, VGS = 0 V
dlDR / dt = 100 A / μs
0.81
μC
Marking
Duty <= 1%, tw = 10 μs
−10 V
0 V
VGS
RL =
66.7
Ω
VDD ∼− −100 V
ID = −1.5 A
Output
J676
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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