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2SC6087 bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor |
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2SC6087 bảng dữ liệu(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC6087 2007-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V DC IC 2.5 A Collector current Pulse ICP 5.0 A Base current IB 1.0 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight:0.55g(typ) 1 : BASE 2 : COLLECTOR 3 : EMITTER |
Số phần tương tự - 2SC6087 |
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Mô tả tương tự - 2SC6087 |
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