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2SJ74 bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor |
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2SJ74 bảng dữ liệu(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SJ74 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz) • High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Complimentary to 2SK170 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS 25 V Gate current IG −10 mA Drain power dissipation PD 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = 25 V, VDS = 0 ⎯ ⎯ 1.0 nA Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = 100 μA 25 ⎯ ⎯ V Drain current IDSS (Note) VDS = −10 V, VGS = 0 −2.6 ⎯ −20 mA Gate-source cut-off voltage VGS (OFF) VDS = −10 V, ID = −0.1 μA 0.15 ⎯ 2.0 V Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, VGS = 0, f = 1 kHz 8 22 ⎯ mS Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 105 ⎯ pF Reverse transfer capacitance Crss VDG = −10 V, ID = 0, f = 1 MHz ⎯ 32 ⎯ pF NF (1) VDS = −10 V, ID = −1 mA, RG = 1 kΩ, f = 10 Hz ⎯ 1.0 10 Noise figure NG (2) VDS = −10 V, ID = −1 mA, RG = 1 kΩ, f = 1 kHz ⎯ 0.5 2 dB Note: IDSS classification GR: −2.6~−6.5 mA, BL: −6.0~−12 mA, V: −10~−20 mA Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) |
Số phần tương tự - 2SJ74_07 |
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Mô tả tương tự - 2SJ74_07 |
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