PHOTODIODE

InGaAs PIN photodiode

Low PDL (Polarization Dependence Loss)

G8370-81/-82/-83/-85

Features

l Low PDL (Polarization Dependence Loss)

l Low noise, low dark current

l Large active area

l Various active area sizes available

Applications

l Laser monitor

l Optical power meter

l Laser diode life test

InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low

noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from

φ1 to φ5 mm.

1

s Specifications / Absolute maximum ratings

Absolute maximum ratings

Active area

Reverse

voltage

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Dimensional

outline/

Window

material *

1

Package

(mm)

(V)

(°C)

(°C)

G8370-81

➀/K

TO-18

φ15

G8370-82

φ2

G8370-83

➁/K

TO-5

φ3

2

G8370-85

➂/K

TO-8

φ51

-40 to +85

-55 to +125

s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Photo

sensitivity

S

Spectral

response

range

Peak

sensitivity

wavelength

λp

1.3 µm

λ=λp

Dark

current

Cut- off

frequency

fc

Ω

-3 dB

Terminal

capacitance

Ct

f=1 M H z

Shunt

resistance

Rsh

PDL

λ=λp

D∗

λ=λp

NEP

λ=λp

Type No.

(µm)

(µm)

Min.

(A/W)

Typ.

(A/W)

Min.

(A/W)

Typ.

(A/W)

Typ.

(nA)

Max.

(nA)

(MHz)

(pF)

(M

Ω)

Typ.

(mdB)

Max.

G8370-81

1

5

35

90

100

2 × 10

-14

G8370-82

525

4

550

25

4 × 10

-14

G8370-83

15

75

2

1000

10

6 × 10

-14

G8370-85

0.9 to 1.7

1.55

0.8 0.9 0.85 1.1

25 *

0.6

3500

3

5

10

5 × 10

12

1 × 10

-13

*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)