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BUK75_764R0-55B_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 4 October 2007
2 of 14
NXP Semiconductors
BUK754R0-55B; BUK764R0-55B
N-channel TrenchMOS standard level FET
3.
Ordering information
4.
Limiting values
[1]
Current is limited by chip power dissipation rating.
[2]
Continuous current is limited by package.
[3]
Refer to document
9397 750 12572 for further information.
[4]
Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170
°C.
d) Refer to application note
AN10273 for further information.
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BUK754R0-55B
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78A
BUK764R0-55B
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
Unit
VDS
drain-source voltage
-55
V
VDGR
drain-gate voltage (DC)
RGS =20kΩ
-55
V
VGS
gate-source voltage
-
±20
V
ID
drain current
Tmb =25 °C; VGS =10V;
see Figure 2 and 3
[1][3] -
193
A
[2] -75
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
[2] -75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
774
A
Ptot
total power dissipation
Tmb =25 °C; see Figure 1
-
300
W
Tstg
storage temperature
−55 +175 °C
Tj
junction temperature
−55 +175 °C
Source-drain diode
IDR
reverse drain current
Tmb =25 °C
[1][2] -
193
A
[2] -75
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs
-
774
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =75A;
VDS ≤ 55 V; RGS =50 Ω;VGS = 10 V; starting
at Tj =25 °C
-
1.2
J
EDS(AL)R
repetitive drain-source avalanche
energy
[4]
--
J


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