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SB035C015-1-W-AG bảng dữ liệu(PDF) 1 Page - TRANSYS Electronics Limited

tên linh kiện SB035C015-1-W-AG
Giải thích chi tiết về linh kiện  Schottky cr Barrier Diode Wafer
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nhà sản xuất  TEL [TRANSYS Electronics Limited]
Trang chủ  http://www.transyselectronics.com
Logo TEL - TRANSYS Electronics Limited

SB035C015-1-W-AG bảng dữ liệu(HTML) 1 Page - TRANSYS Electronics Limited

  SB035C015-1-W-AG Datasheet HTML 1Page - TRANSYS Electronics Limited  
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Data Sheet
Third Angle Protection
µm
420 +/- 20
Symbol
Cathode
Anode
Ti-Ni-Ag
Dimensions in mils (mm)
(2) The characteristics above assume the die are assembled in
industry standard packages using appropriate attach methods.
Mechanical Dimensions
Wafer
Die
SCD0961-1
Page 1 of 1
Transys Electronics LTD
Email: sales@transyselectronics.com
Website: www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed
to be accurate and may be changed without notice at anytime. Liability will not be
accepted by Transys Electronics LTD for any consequences whatsoever in its use. This
publication does not convey nor imply any license under patent or other
intellectual/industrial property rights. The products within this specification are not
designed for use in any life support apparatus whatsoever where malfunction can be
reasonably expected to cause personal injury or death. Customers using these products
in the aforementioned applications do so at their own risk and agree to fully indemnify
Transys Electronics LTD for any damage/ legal fees either direct, incidental or
consequential from this improper use or sale.
SB035C015-1-W-Ag
Schottky cr Barrier Diode Wafer
35 Mils, 15 Volt, 1 Amp, 0.36V
F.
15
VRRM
Maximum Repetitive Reverse Voltage (2)
Electrical Characteristics @ 25
Reverse Leakage Current @ VR = 15V (2)
IR(1)
C
Volt
1000
SB065C040-1-W-Ag (See ordering code below)
IF(AV)
1
Typical Average Forward Rectified Current (2)
µA
Maximum Forward Voltage @ IF = 1A (1)(2)
VF
Volt
0.36
Amp
Symbol Unit
Reverse Leakage Current @ VR = 15V, 125OC (2)
IR(2)
mA
Storage Temperature Range (2)
TJ
-45 to +125
C
Junction Operating Temperature Range (2)
TSG
-45 to +125
C
(1) Pulse Width tp = < 300µS, Duty Cycle <2%
Cr-Al-Ni-Ag - Suffix "Ag"
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - CR/Ti/Ni/Ag (Suffix "Ag")
Bottom (cathode) Ti/Ni/Ag
Scribe line Width 80 µM
35.0
(900)
15
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Schottky Barrier
65 Mils
CR Barrier 40Volt 3 Amp Wafer CR/Ti/Ni/Ag
Ordering Code
SB065C040-3-W-Ag
ESD Machine Model (MM)
VESD(mm)
Volt
>1000
29.9
(760)
35.0
(900)
29.9
(760)
e.g.


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