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FDD7N20TF bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDD7N20TF bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page FDD7N20 / FDU7N20 Rev. A www.fairchildsemi.com 2 Package Marking and Ordering Information T C = 25 oC unless otherwise noted Electrical Characteristics Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD7N20 FDD7N20TM D-PAK 380mm 16mm 2500 FDD7N20 FDD7N20TF D-PAK 380mm 16mm 2000 FDU7N20 FDU7N20 I-PAK - - 70 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 200 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25oC- 0.2 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS=0V - - 1 μA VDS = 160V, TC = 125oC- - 10 μA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 2.5A - 0.58 0.69 Ω gFS Forward Transconductance VDS = 40V, ID = 2.5A (Note 4) -6.2 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f=1MHz - 185 250 pF Coss Output Capacitance - 45 65 pF Crss Reverse Transfer Capacitance - 5 10 pF Qg Total Gate Charge at 10V VDS = 160V, ID = 7A VGS=10V (Note 4, 5) -5 6.7 nC Qgs Gate to Source Gate Charge - 1.7 - nC Qgd Gate to Drain “Miller” Charge - 2.4 - nC td(on) Turn-On Delay Time VDD = 100V, ID = 7A RG = 25Ω (Note 4, 5) - 9 28 ns tr Turn-On Rise Time - 30 70 ns td(off) Turn-Off Delay Time - 13 36 ns tf Turn-Off Fall Time - 10 30 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5A - - 1.4 V trr Reverse Recovery Time VGS = 0V, ISD = 7A dIF/dt = 100A/μs (Note 4) - 120 - ns Qrr Reverse Recovery Charge - 0.4 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L =5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
Số phần tương tự - FDD7N20TF |
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Mô tả tương tự - FDD7N20TF |
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