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STA333ML bảng dữ liệu(PDF) 7 Page - STMicroelectronics

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STA333ML
Electrical specifications
7/15
3.4
Electrical characteristics
Table 5.
Electrical characteristics
(VCC = 18 V,VDD_DIG=3.3 V fsw = 384 kHz, Tamb = 25 °C, RL = 8 Ω unless otherwise
specified)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Po
Output power BTL
THD = 1 %
16
W
THD = 10%
20
RdsON
Power Pchannel/Nchannel
MOSFET (Total Bridge)
ld=1A
180
250
m
ldss
Power Pchannel/Nchannel
leakage
Vcc = 18V
10
µA
gP
Power Pchannel RdsON
Matching
ld=1A
95
%
gN
Power Nchannel RdsON
Matching
ld=1A
95
%
ILDT
Low current dead time (static)
Resistive load Figure 3.5
10
ns
IHDT
High current dead time
(dynamic)
@lload = 1.5 A (Figure 5)10
20
ns
tr
Rise time
Resistive load Figure 3.8
10
ns
tf
Fall time
Resistive load Figure 3.8
10
ns
VCC
Supply voltage operating
voltage
4.5
18
V
Icc
Supply current from Vcc in
power down
PWRDN = 0
0.1
mA
Supply current from Vcc in
operation
PCM Input signal = -60 dBFS.
Switching frequency = 384KHz
No LC filters
30
mA
Supply current DDX processing
(reference only)
Internal clock = 49.152 MHz
80
mA
Ilim
Overcurrent limit
Nonlinear output
2.2
3.5
4.3
A
Isc
short circuit protection
Hi-Z output
2.7
3.8
5.0
A
UVL
Under voltage protection
threshold
3.5
4.3
V
tmin
Output minimum pulse width
No load
20
30
60
ns
DR
Dynamic range
100
dB
SNR
Signal to noise ratio
A - weighted
94
dB
THD+N
Total harmonic distortion +
noise
Po = 1 W, f = 1 kHz
0.05
0.2
%
PSRR
Power supply rejection ratio
DDX stereo, <5 kHz
Vripple = 1 VRMS
Audio input = dither only
80
dB


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