công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

STP12NM60N bảng dữ liệu(PDF) 4 Page - STMicroelectronics

tên linh kiện STP12NM60N
Giải thích chi tiết về linh kiện  N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP12NM60N bảng dữ liệu(HTML) 4 Page - STMicroelectronics

  STP12NM60N Datasheet HTML 1Page - STMicroelectronics STP12NM60N Datasheet HTML 2Page - STMicroelectronics STP12NM60N Datasheet HTML 3Page - STMicroelectronics STP12NM60N Datasheet HTML 4Page - STMicroelectronics STP12NM60N Datasheet HTML 5Page - STMicroelectronics STP12NM60N Datasheet HTML 6Page - STMicroelectronics STP12NM60N Datasheet HTML 7Page - STMicroelectronics STP12NM60N Datasheet HTML 8Page - STMicroelectronics STP12NM60N Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 18 page
background image
Electrical characteristics
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
4/18
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
600
V
dv/dt(1)
1.
Characteristics value at turn off on inductive load
Drain-source voltage slope
VDD = 400V,ID = 10A,
VGS = 10V
41
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 5A
0.35
0.41
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID= 5A
8S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50V, f =1MHz,
VGS = 0
960
65
7
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480V
180
pF
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
5
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480V, ID = 10A
VGS = 10V
(see Figure 18)
30.5
5
16
nC
nC
nC


Số phần tương tự - STP12NM60N

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
VBsemi Electronics Co.,...
STP12NM60N VBSEMI-STP12NM60N Datasheet
1Mb / 8P
   N-Channel 650 V (D-S) MOSFET
More results

Mô tả tương tự - STP12NM60N

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
STMicroelectronics
STB15NM60N STMICROELECTRONICS-STB15NM60N Datasheet
607Kb / 18P
   N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
STF15NM65N STMICROELECTRONICS-STF15NM65N Datasheet
499Kb / 18P
   N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET
STP21NM50N STMICROELECTRONICS-STP21NM50N_07 Datasheet
463Kb / 18P
   N-channel 500V - 0.15廓 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh??Power MOSFET
STB21NM50N STMICROELECTRONICS-STB21NM50N Datasheet
633Kb / 16P
   N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STP21NM60N STMICROELECTRONICS-STP21NM60N Datasheet
672Kb / 16P
   N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STB20NM60-1 STMICROELECTRONICS-STB20NM60-1 Datasheet
440Kb / 18P
   N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET
STF19NM65N STMICROELECTRONICS-STF19NM65N Datasheet
532Kb / 19P
   N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET
STD11NM60N-1 STMICROELECTRONICS-STD11NM60N-1 Datasheet
489Kb / 18P
   N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET
STP25NM60N STMICROELECTRONICS-STP25NM60N_07 Datasheet
523Kb / 18P
   N-channel 600V - 0.140廓 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
STB23NM60N STMICROELECTRONICS-STB23NM60N Datasheet
554Kb / 19P
   N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


bảng dữ liệu tải về

Go To PDF Page


Link URL




Chính sách bảo mật
ALLDATASHEET.VN
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com