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IRFPS37N50APBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRFPS37N50APBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFPS37N50APbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 20 ––– ––– S VDS = 50V, ID = 22A Qg Total Gate Charge ––– ––– 180 ID = 36A Qgs Gate-to-Source Charge ––– ––– 46 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 71 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 23 ––– VDD = 250V tr Rise Time ––– 98 ––– ID = 36A td(off) Turn-Off Delay Time ––– 52 ––– RG = 2.15Ω tf Fall Time ––– 80 ––– RD = 7.0Ω,See Fig. 10 Ciss Input Capacitance ––– 5579 ––– VGS = 0V Coss Output Capacitance ––– 810 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 36 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 7905 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 221 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 400 ––– VGS = 0V, VDS = 0V to 400V Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.13 Ω VGS = 10V, ID = 22A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 1260 mJ IAR Avalanche Current ––– 36 A EAR Repetitive Avalanche Energy ––– 44 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 36A Qrr Reverse RecoveryCharge ––– 8.6 13 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 36 144 A Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.28 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance |
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