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SN74TVC3010DBQR bảng dữ liệu(PDF) 7 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  10-BIT VOLTAGE CLAMP
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SN74TVC3010DBQR bảng dữ liệu(HTML) 7 Page - Texas Instruments

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SN74TVC3010
10-BIT VOLTAGE CLAMP
SCDS088G – APRIL 1999 – REVISED AUGUST 2003
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
electrical characteristics
The electrical characteristics of the NMOS transistors used in the TVC devices are illustrated by TI SPICE
simulations. Figure 4 shows the test configuration for the TI SPICE simulations. The results, shown in
Figures 5 and 6, show the current through a pass transistor versus the voltage at the source for different
reference voltages. The plots of the dc characteristics clearly reveal that the device clamps at the desired
reference voltage for the varying device environments.
Figure 5 shows the V-I characteristics, with low reference voltages and a reference-transistor drain-supply
voltage of 3.3 V. To further investigate the spread of the V-I characteristic curves, VREF was held at 2.5 V and
IREF was increased by raising VDDREF (see Figure 6). The result was a tighter grouping of the V-I curves.
VDPASS
VREF
RDREF
GATE
VBIAS
VDDREF
RDPASS
VDDPASS
VSPASS
Figure 4. TI SPICE Simulation Schematic and Voltage-Node Names


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