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VP0120 bảng dữ liệu(PDF) 1 Page - Supertex, Inc |
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VP0120 bảng dữ liệu(HTML) 1 Page - Supertex, Inc |
1 / 4 page 7-223 9 7 VP0120 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Note: See Package Outline section for dimensions. P-Channel Enhancement-Mode Vertical DMOS FETs Package Options Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C * Distance of 1.6 mm from case for 10 seconds. Applications ■ ■ Motor controls ■ ■ Converters ■ ■ Amplifiers ■ ■ Switches ■ ■ Power supply circuits ■ ■ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Features ■ ■ Free from secondary breakdown ■ ■ Low power drive requirement ■ ■ Ease of paralleling ■ ■ Low C ISS and fast switching speeds ■ ■ Excellent thermal stability ■ ■ Integral Source-Drain diode ■ ■ High input impedance and high gain ■ ■ Complementary N- and P-channel devices Order Number / Package BV DSS /RDS(ON) I D(ON) BVDGS (max) (min) TO-92 Die† -200V 25Ω -100mA VP0120N3 VP0120ND †MIL visual screening available Ordering Information TO-92 S G D – OBSOLETE – |
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Mô tả tương tự - VP0120 |
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