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SST29SF040-55-4I-WH bảng dữ liệu(PDF) 1 Page - Silicon Storage Technology, Inc

tên linh kiện SST29SF040-55-4I-WH
Giải thích chi tiết về linh kiện  4 Mbit (x8) Small-Sector Flash
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nhà sản xuất  SST [Silicon Storage Technology, Inc]
Trang chủ  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

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©2004 Silicon Storage Technology, Inc.
S71160-10-000
2/04
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
4 Mbit (x8) Small-Sector Flash
SST29SF040 / SST29VF040
FEATURES:
Organized as 512K x8
Single Voltage Read and Write Operations
– 4.5-5.5V-only for SST29SF040
– 2.7-3.6V for SST29VF040
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 10 mA (typical)
– Standby Current:
30 µA (typical) for SST29SF040
1 µA (typical) for SST29VF040
Sector-Erase Capability
– Uniform 128 Byte sectors
Fast Read Access Time:
– 55 ns for SST29SF040
– 55 ns and 70 ns for SST29VF040
Latched Address and Data
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time: 8 seconds (typical)
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
TTL I/O Compatibility for SST29SF040
CMOS I/O Compatibility for SST29VF040
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
PRODUCT DESCRIPTION
The SST29SF040 and SST29VF040 are 512K x8 CMOS
Small-Sector Flash (SSF) manufactured with SST’s propri-
etary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST29SF040 devices write
(Program or Erase) with a 4.5-5.5V power supply. The
SST29VF040 devices write (Program or Erase) with a 2.7-
3.6V power supply. These devices conform to JEDEC
standard pinouts for x8 memories.
Featuring
high
performance
Byte-Program,
the
SST29SF040 and SST29VF040 devices provide a maxi-
mum Byte-Program time of 20 µsec. To protect against
inadvertent write, they have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at
least 10,000 cycles. Data retention is rated at greater than
100 years.
The SST29SF040 and SST29VF040 devices are suited
for applications that require convenient and economical
updating of program, configuration, or data memory. For
all system applications, they significantly improve perfor-
mance and reliability, while lowering power consumption.
They inherently use less energy during Erase and Pro-
gram than alternative flash technologies. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed dur-
ing any Erase or Program operation is less than alternative
flash technologies. They also improve flexibility while low-
ering the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
To meet high density, surface mount requirements, the
SST29SF040 and SST29VF040 devices are offered in 32-
lead PLCC and 32-lead TSOP packages. See Figures 1
and 2 for pin assignments.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
SST29SF/VF0404Mb (x8) Byte-Program, Small-Sector flash memories


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