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6N60-ATA3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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6N60-ATA3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
2 / 7 page 6N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 7 www.unisonic.com.tw QW-R502-117.A ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 6N60-A 600 V Drain-Source Voltage 6N60-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 6.2 A TC = 25°C 6.2 A Continuous Drain Current TC = 100°C ID 3.9 A Pulsed Drain Current (Note 1) IDM 24.8 A Single Pulsed (Note 2) EAS 440 mJ Avalanche Energy Repetitive (Note 1) EAR 13 mJ Power Dissipation PD 62.5 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction-to-Ambient θJA 62 °C/W Junction-to-Case θJC 2 °C/W ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 6N60-A 600 V Drain-Source Breakdown Voltage 6N60-B BVDSS VGS = 0V, ID = 250µA 650 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 µA Forward VGS = 30V, VDS = 0V 100 nA Gate- Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID = 250 µA, Referenced to 25°C 0.53 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.1A 1.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 770 1000 pF Output Capacitance COSS 95 120 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0 MHz 10 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 20 50 ns Turn-On Rise Time tR 70 150 ns Turn-Off Delay Time tD(OFF) 40 90 ns Turn-Off Fall Time tF VDD=300V, ID =6.2A, RG =25Ω (Note 4, 5) 45 100 ns Total Gate Charge QG 20 25 nC Gate-Source Charge QGS 4.9 nC Gate-Drain Charge QGD VDS=480V, ID=6.2A, VGS=10 V (Note 4, 5) 9.4 nC |
Số phần tương tự - 6N60-ATA3-R |
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Mô tả tương tự - 6N60-ATA3-R |
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