IRFZ48RLPBF datasheet(1/10 Pages) IRF

tên linh kiện	IRFZ48RLPBF

Giải thích chi tiết về linh kiện	HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )

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IRFZ48RSPbF

IRFZ48RLPbF

HEXFET® Power MOSFET

08/24/04

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

50*

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

50*

A

IDM

Pulsed Drain Current

290

PD @TC = 25°C

Power Dissipation

190

W

Linear Derating Factor

1.3

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

100

mJ

dv/dt

Peak Diode Recovery dv/dt

4.5

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.8

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

VDSS = 60V

RDS(on) = 0.018Ω

ID = 50*A

S

D

G

Advanced HEXFET® Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area.

This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest power

capability and the lowest possible on-resistance in any existing

surface mount package. The D2Pak is suitable for high current

applications because of its low internal connection resistance and can

dissipate up to 2.0W in a typical surface mount application.

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Drop in Replacement of the IRFZ48

for Linear/Audio Applications

l Lead-Free

Description

D2Pak

IRFZ48RS

TO-262

IRFZ44RL

PD - 95761

Số phần tương tự - IRFZ48RLPBF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	IRFZ48RLPBF	961Kb / 8P	Power MOSFET S-Pending-Rev. A, 22-Jul-08
Vishay Siliconix	IRFZ48RLPBF	208Kb / 9P	Power MOSFET Rev. C, 30-May-11

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRFZ48PBF	3Mb / 7P	HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )
	IRF9Z14PBF	257Kb / 8P	HEXFET Power MOSFET ( VDSS = -60V , RDS(on) = 0.50廓 , ID = -6.7A )
	IRFR9024PBF	1Mb / 10P	HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28廓 , ID = -8.8A )
	IRCZ44	132Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A)
	IRFP3710PBF	233Kb / 9P	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )
	IRFD9110PBF	1Mb / 8P	HEXFET POWER MOSFET ( VDSS = -100V , RDS(on) = 1.2廓 , ID = -0.70A )
	IRL640PBF	930Kb / 8P	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18廓 , ID = 17A )
	IRF630PBF	2Mb / 8P	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )
	IRFR9210PBF	1Mb / 10P	HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0廓 , ID = -1.9A )
	IRFR420PBF	857Kb / 10P	HEXFET POWER MOSFET ( VDSS = 500V , RDS(on) = 3.0廓 , ID = 2.4A )

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