IRF1407LPBF datasheet(1/12 Pages) IRF

tên linh kiện	IRF1407LPBF

Giải thích chi tiết về linh kiện	HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Download	12 Pages

Scroll/Zoom	100%

nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

Logo

1 / 12 page

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

100

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

70

A

IDM

Pulsed Drain Current

520

PD @TA = 25°C

Power Dissipation

3.8

W

PD @TC = 25°C

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

390

mJ

IAR

Avalanche Current

See Fig.12a, 12b, 15, 16

A

EAR

Repetitive Avalanche Energy

mJ

dv/dt

Peak Diode Recovery dv/dt

4.6

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

HEXFET® Power MOSFET

S

D

G

Absolute Maximum Ratings

VDSS = 75V

RDS(on) = 0.0078Ω

ID = 100A

Description

06/30/04

www.irf.com

1

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Benefits

PD -95486

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.75

°C/W

RθJA

Junction-to-Ambient(PCB Mounted,steady-state)**

–––

40

Thermal Resistance

IRF1407SPbF

IRF1407LPbF

TO-262

IRF1407L

D2Pak

IRF1407S

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existing surface mount package. The D2Pak is suitable for

high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF1407L) is available for low-

profile applications.

**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer

to application note #AN-994.

Số phần tương tự - IRF1407LPBF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	IRF1407LPbF	578Kb / 12P	HEXFET짰 Power MOSFET 2016-5-26

More results

Mô tả tương tự - IRF1407LPBF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRF1407S	159Kb / 11P	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??
	IRFZ44VZPBF	355Kb / 13P	HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )
	IRFR5305PBF	248Kb / 11P	HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A )
	IRFR4104PBF	273Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 5.5m廓 , ID = 42A )
	IRFP054VPBF	176Kb / 9P	HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A )
	IRF1405ZS-7PPBF	696Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )
	IRF3710SPBF	279Kb / 11P	HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )
	IRFP2907PBF	207Kb / 10P	AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5m廓 , ID = 209A)
	IRFZ46N	190Kb / 9P	HEXFET짰 Power MOSFET(VDSS = 55V,RDS(on) = 16.5m廓,ID = 53A)
	IRFZ44ZPBF	291Kb / 13P	HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 13.9m廓 , ID = 51A )

More results

IRF1407LPBF bảng dữ liệu(PDF) 1 Page - International Rectifier

IRF1407LPBF bảng dữ liệu(HTML) 1 Page - International Rectifier

Số phần tương tự - IRF1407LPBF

Mô tả tương tự - IRF1407LPBF

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

bảng dữ liệu tải về

Link URL