công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
ST662ACN bảng dữ liệu(PDF) 11 Page - STMicroelectronics |
|
ST662ACN bảng dữ liệu(HTML) 11 Page - STMicroelectronics |
11 / 20 page ST662AB - ST662AC Application circuit 11/20 7 Application circuit Based on fast charge/discharge of capacitors, this circuit involves high di/dt values limited only by RON of switches. This implies a critical layout design due to the need to minimize inductive paths and place capacitors as close as possible to the device. A good layout design is strongly recommended for noise reason. For best performance, use very short connections to the capacitors and the values shown in Table 6. C3 and C4 must have low ESR in order to minimize the output ripple. Their values can be reduced to 2µF and 1µF, respectively, when using ceramic capacitors, but must be of 10µF or larger if aluminium electrolytic are chosen. C5 must be placed as close to the device as possible and could be omitted if very low output noise performance are not required. Figure 15. and Figure 16. show, respectively, our EVALUATION kit layout and the relatively. Figure 15. KIT Lay-out Figure 16. Electrical schematic |
Số phần tương tự - ST662ACN |
|
Mô tả tương tự - ST662ACN |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |