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1 / 13 page IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF HEXFET® Power MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A 07/22/05 www.irf.com 1 AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.65 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) i ––– 40 420 270 See Fig.12a, 12b, 15, 16 230 1.5 ± 20 Max. 150 110 600 75 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) HEXFET® is a registered trademark of International Rectifier. D2Pak IRF1405ZSPbF TO-220AB IRF1405ZPbF TO-262 IRF1405ZLPbF PD - 97018 |
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