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TIPP117 bảng dữ liệu(PDF) 1 Page - Power Innovations Ltd

tên linh kiện TIPP117
Giải thích chi tiết về linh kiện  PNP SILICON POWER DARLINGTONS
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Trang chủ  http://www.bourns.com
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TIPP117 bảng dữ liệu(HTML) 1 Page - Power Innovations Ltd

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TIPP115, TIPP116, TIPP117
PNP SILICON POWER DARLINGTONS
PRODUCT
INFORMATION
1
MAY 1989 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
20 W Pulsed Power Dissipation
q
100 V Capability
q
2 A Continuous Collector Current
q
4 A Peak Collector Current
LP PACKAGE
(TOP VIEW)
MDTRAB
E
C
B
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. VCE = 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
TIPP115
TIPP116
TIPP117
VCBO
-60
-80
-100
V
Collector-emitter voltage (IB = 0)
TIPP115
TIPP116
TIPP117
VCEO
-60
-80
-100
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current
IC
-2
A
Peak collector current (see Note 1)
ICM
-4
A
Continuous base current
IB
-50
mA
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
0.8
W
Pulsed power dissipation (see Note 3)
PT
20
W
Operating junction temperature range
Tj
-55 to +150
°C
Storage temperature range
Tstg
-55 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
260
°C


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