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MCH5834 bảng dữ liệu(PDF) 2 Page - Sanyo Semicon Device |
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MCH5834 bảng dữ liệu(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page MCH5834 No. A0558-2/6 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA Gate-to-Source Leakage Current IGSS VGS=8V, VDS=0V 1 µA Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=350mA 0.45 0.8 S RDS(on)1 ID=350mA, VGS=4V 0.7 0.9 Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=200mA, VGS=2.5V 0.8 1.15 Ω RDS(on)3 ID=10mA, VGS=1.5V 1.6 2.4 Ω Input Capacitance Ciss VDS=10V, f=1MHz 30 pF Output Capacitance Coss VDS=10V, f=1MHz 7 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 3.5 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr See specified Test Circuit. 6 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 10 ns Fall Time tf See specified Test Circuit. 8 ns Total Gate Charge Qg VDS=10V, VGS=4V, ID=700mA 1 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=700mA 0.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=700mA 0.2 nC Diode Forward Voltage VSD IS=700mA, VGS=0V 0.93 1.2 V [SBD] Reverse Voltage VR IR=0.5mA 15 V Forward Voltage VF1IF=0.3A 0.37 0.42 V VF2IF=0.5A 0.42 0.47 V Reverse Current IR VR=15V 120 µA Interterminal Capacitance C VR=10V, f=1MHz 13 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm (typ) 7021A-008 5 2 4 13 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain Top view 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 2.0 0.3 0.65 0.15 0 to 0.02 54 12 3 54 12 3 |
Số phần tương tự - MCH5834 |
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Mô tả tương tự - MCH5834 |
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