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STP12NM50N bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET
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Electrical characteristics
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
4/18
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
500
V
dv/dt(1)
1.
Characteristic value at turn off inductive load
Peak diode recovery voltage
slope
Vdd=400V, Id=11A,
Vgs=10V
44
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 5.5A
0.29
0.38
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID = 5.5A
8S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz,
VGS=0
880
230
30
pF
pF
pF
Coss eq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
130
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400V, ID = 11A
VGS =10V
(see Figure 9)
30
6
15
nC
nC
nC
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
4.5


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