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FW168 bảng dữ liệu(PDF) 1 Page - Sanyo Semicon Device |
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FW168 bảng dữ liệu(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page FW168 No. A0386-1/4 Features • 4V drive. • Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% --16 A Allowable Power Dissipation PD Mounted on a ceramic board (2000mm2!0.8mm) 1unit 1.4 W Total Dissipation PT Mounted on a ceramic board (2000mm2!0.8mm) 1.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V --1 µA Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance yfs VDS=--10V, ID=--4A 3.7 6.2 S RDS(on)1 ID=--4A, VGS=--10V 54 72 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--2A, VGS=--4.5V 88 125 m Ω RDS(on)3 ID=--2A, VGS=--4V 100 145 m Ω Input Capacitance Ciss VDS=--10V, f=1MHz 590 pF Output Capacitance Coss VDS=--10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 115 pF Marking : W168 Continued on next page. Ordering number : ENA0386 71206 / 41006PA MS IM TB-00002238 FW168 P-Channel Silicon MOSFET General-Purpose Switching Device Applications SANYO Semiconductors DATA SHEET Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN |
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