2SC6118LS

No. A0578-1/4

Features

•

High speed.

•

High breakdown voltage (VCBO=1500V).

•

High reliability (Adoption of HVP process).

•

Adoption of MBIT process.

•

On-chip damper diode.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1500

V

Collector-to-Emitter Voltage

VCEO

800

V

Emitter-to-Base Voltage

VEBO

6V

Collector Current

IC

8A

Collector Current (Pulse)

ICP

20

A

Collector Dissipation

PC

2.0

W

Tc=25°C35

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=800V, IE=0A

10

µA

Collector Cutoff Current

ICES

VCE=1500V, RBE=0Ω

1.0

mA

Collector Sustain Voltage

VCEO(sus)

IC=100mA, IB=0A

800

V

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

40

130

mA

Continued on next page.

Ordering number : ENA0578A

82207 TI IM / N2906KC TI IM TC-00000188

SANYO Semiconductors

DATA SHEET

2SC6118LS

NPN Triple Diffused Planar Silicon Transistor

Color TV Horizontal Deflection

Output Applications

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