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2 / 4 page GSS9922E Page: 2/4 ISSUED DATE :2006/04/06 REVISED DATE : Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.05 - V/ : Reference to 25 , I : D=1mA Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=1mA Forward Transconductance gfs - 22 - S VDS=4.5V, ID=6A Gate-Source Leakage Current IGSS - - ±10 uA VGS= ±12V Drain-Source Leakage Current(Tj=25 ) : - - 10 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70 ) : IDSS - - 100 uA VDS=16V, VGS=0 - - 20 VGS=4.5V, ID=6A Static Drain-Source On-Resistance2 RDS(ON) - - 25 m VGS=2.5V, ID=4A Total Gate Charge2 Qg - 25 40 Gate-Source Charge Qgs - 3 - Gate-Drain (“Miller”) Change Qgd - 9 - nC ID=6A VDS=16V VGS=4.5V Turn-on Delay Time2 Td(on) - 11 - Rise Time Tr - 12 - Turn-off Delay Time Td(off) - 47 - Fall Time Tf - 23 - ns VDS=15V ID=1A VGS=4.5V RG=3.3 RD=15 Input Capacitance Ciss - 1730 2770 Output Capacitance Coss - 280 - Reverse Transfer Capacitance Crss - 240 - pF VGS=0V VDS=20V f=1.0MHz Gate Resistance Rg - 2.2 - f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=0.84A, VGS=0V Reverse Recovery Time2 Trr - 24 - ns Reverse Recovery Charge Qrr - 18 - nC IS=6A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad. |
Số phần tương tự - GSS9922E |
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Mô tả tương tự - GSS9922E |
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