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TDA9901TS bảng dữ liệu(PDF) 5 Page - NXP Semiconductors

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1999 Oct 08
5
Philips Semiconductors
Product specification
Wideband differential digital controlled
variable gain amplifier
TDA9901
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
HANDLING
Inputs and outputs are protected against electrostatic discharges in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling integrated circuits.
THERMAL CHARACTERISTICS
CHARACTERISTICS
VDDA =V11 to V12 = 4.75 to 5.25 V; VDDD =V18 to V17 = 3.0 to 5.25 V; VSSA and VSSD shorted together;
Tamb = −40 to +85 °C; typical values measured at VDDA = 5.0 V; VDDD = 3.3 V and Tamb =25 °C; unless otherwise
specified; note 1.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDDA
analog supply voltage
−0.3
+7.0
V
VDDD
digital supply voltage
−0.3
+7.0
V
∆V
DD
supply voltage difference between VDDA and VDDD
−1.0
+4.0
V
VI
input voltage level
−0.3
+7.0
V
IO
output current
10
mA
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VDDA
analog supply voltage
4.75
5.0
5.25
V
VDDD
digital supply voltage
3.0
3.3
5.25
V
∆VDD
voltage difference
between VDDA and VDDD
−0.2
+2.5
V
IDDA
analog supply current
30
36
mA
IDDD
digital supply current
3.0
5.0
mA
Variable gain amplifier transfer characteristics
B−3dB
−3 dB small signal
bandwidth
Vo(dif)(p-p) = 0.125 V;
Tamb =25 °C
110
130
MHz
td(g)
group delay time
up to fi = 20 MHz;
minimum gain;
Tamb =25 °C
2.5
ns
∆td(g)
group delay difference
6 dB gain step;
Tamb =25 °C
−−
300
ps


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