TC1054_07 datasheet(3/18 Pages) MICROCHIP

tên linh kiện	TC1054

Giải thích chi tiết về linh kiện	50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

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DS21350D-page 3

TC1054/TC1055/TC1186

Output Noise

eN

—

260

—

nV/

√Hz IL = IOUTMAX

SHDN Input

SHDN Input High Threshold

VIH

45

—

%VIN VIN = 2.5V to 6.5V

SHDN Input Low Threshold

VIL

——

15

%VIN VIN = 2.5V to 6.5V

ERROR Output

Minimum VIN Operating Voltage

VINMIN

1.0

—

V

Output Logic Low Voltage

VOL

—

400

mV

1 mA Flows to ERROR

ERROR Threshold Voltage

VTH

—

0.95 x VR

—V

See Figure 4-2

ERROR Positive Hysteresis

VHYS

—50—

mV

Note 7

VOUT to ERROR Delay

tDELAY

—2.5

—

ms

VOUT falling from VR to VR - 10%

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.

Boldface type specifications apply for junction temperatures of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

2:

3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested

over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating

effects are covered by the thermal regulation specification.

4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal

value.

5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,

excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations”, “Ther-

mal Considerations”, for more details.

7: Hysteresis voltage is referenced by VR.

8: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.

9: Apply for junction temperatures of -40C to +85C.

TC VOUT = (VOUTMAX – VOUTMIN)x 106

VOUT x ΔT

Số phần tương tự - TC1054_07

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Microchip Technology	TC1054-1.8VCT	501Kb / 18P	50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output 2002
Microchip Technology	TC1054-1.8VCT713	456Kb / 20P	50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output 11/29/12
TelCom Semiconductor, I...	TC1054-2.5VCT	123Kb / 12P	50mA CMOS LDO WITH SHUTDOWN AND ERROR OUTPUT
Microchip Technology	TC1054-2.5VCT	501Kb / 18P	50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output 2002
Microchip Technology	TC1054-2.5VCT713	456Kb / 20P	50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output 11/29/12

More results

Mô tả tương tự - TC1054_07

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Microchip Technology	TC2054	943Kb / 18P	50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output 2006
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	TC1014	705Kb / 22P	50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass 2007
	TC2014	894Kb / 20P	50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass 2006
	TC2185-3.3VCTTR	897Kb / 20P	50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass 02/16/06
	TC2014	371Kb / 20P	50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass 2001-2012 11/29/12
	TC2014	362Kb / 18P	50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass 2003
	TC2185-50VCTTR	827Kb / 20P	50 mA, 100 mA, 150 mA CMOS LDOs with 02/16/06
	TC2015-50VCTTR	827Kb / 20P	50 mA, 100 mA, 150 mA CMOS LDOs with 02/16/06

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