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STK14C88-3NF45 bảng dữ liệu(PDF) 11 Page - Simtek Corporation |
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STK14C88-3NF45 bảng dữ liệu(HTML) 11 Page - Simtek Corporation |
11 / 17 page 11 STK14C88-3 February 2007 Document Control #ML0015 Rev 0.6 SOFTWARE NONVOLATILE RECALL A software RECALL cycle is initiated with a sequence of READ operations in a manner similar to the soft- ware STORE initiation. To initiate the RECALL cycle, the following sequence of E controlled READ opera- tions must be performed: 1. Read address 0E38 (hex) Valid READ 2. Read address 31C7 (hex) Valid READ 3. Read address 03E0 (hex) Valid READ 4. Read address 3C1F (hex) Valid READ 5. Read address 303F (hex) Valid READ 6. Read address 0C63 (hex) Initiate RECALL cycle Internally, RECALL is a two-step procedure. First, the SRAM data is cleared, and second, the nonvolatile information is transferred into the SRAM cells. After the t RECALL cycle time the SRAM will once again be ready for READ and WRITE operations. The RECALL operation in no way alters the data in the nonvolatile elements. The nonvolatile data can be recalled an unlimited number of times. AutoStore OPERATION The STK14C88-3 can be powered in one of three modes. During normal AutoStore operation, the STK14C88- 3 will draw current from V CCX to charge a capacitor connected to the V CAP pin. This stored charge will be used by the chip to perform a single STORE opera- tion. After power up, when the voltage on the V CAP pin drops below V SWITCH, the part will automatically disconnect the V CAP pin from VCCX and initiate a STORE operation. Figure 2 shows the proper connection of capacitors for automatic store operation. A charge storage capacitor having a capacity of between 68 μF and 220 μF (± 20%) rated at 4.7V should be provided. In order to prevent unneeded STORE operations, automatic STOREs as well as those initiated by externally driving HSB low will be ignored unless at least one WRITE operation has taken place since the most recent STORE or RECALL cycle. Software- initiated STORE cycles are performed regardless of whether a WRITE operation has taken place. If the power supply drops faster than 20 μs/volt before V CCX reaches VSWITCH, then a 1 ohm resistor should be inserted between V CCX and the system supply to avoid momentary excess of current between Vccx and Vcap. HSB OPERATION The STK14C88-3 provides the HSB pin for control- ling and acknowledging the STORE operations. The HSB pin can be used to request a hardware STORE cycle. When the HSB pin is driven low, the STK14C88-3 will conditionally initiate a STORE oper- ation after t DELAY; an actual STORE cycle will only begin if a WRITE to the SRAM took place since the last STORE or RECALL cycle. The HSB pin also acts as an open drain driver that is internally driven low to indicate a busy condition while the STORE (initi- ated by any means) is in progress. Pull up this pin with an external 10K ohm resistor to VCAP if HSB is used as a driver. SRAM READ and WRITE operations that are in progress when HSB is driven low by any means are given time to complete before the STORE operation is initiated. After HSB goes low, the STK14C88-3 will continue SRAM operations for t DELAY. During tDELAY, multiple SRAM READ operations may take place. If a WRITE is in progress when HSB is pulled low it will be allowed a time, t DELAY, to complete. However, any SRAM WRITE cycles requested after HSB goes low will be inhibited until HSB returns high. The HSB pin can be used to synchronize multiple STK14C88-3s while using a single larger capacitor. To operate in this mode the HSB pin should be con- nected together to the HSB pins from the other STK14C88-3s. An external pull-up resistor to +3.3V is required since HSB acts as an open drain pull- down. The V CAP pins from the other STK14C88-3 Figure 2: AutoStore Mode *If HSB is not used, it should be left unconnected. 10kO* + 1 16 17 32 31 30 |
Số phần tương tự - STK14C88-3NF45 |
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Mô tả tương tự - STK14C88-3NF45 |
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