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IRF1010EPBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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1 / 8 page  IRF1010EPbF HEXFET® Power MOSFET 07/04/07 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 60V RDS(on) = 12mΩ ID = 84A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A IDM Pulsed Drain Current 330 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.4 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 50 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) PD - 94965A |
Số phần tương tự - IRF1010EPBF |
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