công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
CXXXXB500-SXX00-A bảng dữ liệu(PDF) 2 Page - Cree, Inc |
|
CXXXXB500-SXX00-A bảng dữ liệu(HTML) 2 Page - Cree, Inc |
2 / 4 page Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc. CPR3CS Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at T A = 5°C Note CxxxXB500-Sxx00-A DC Forward Current 150mANote 2 Peak Forward Current (1/10 duty cycle @ 1kHz) 200mA LED Junction Temperature 125°C Reverse Voltage 5 V Operating Temperature Range -40°C to +85°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM)Note 3 1000V Electrostatic Discharge Classification (MIL-STD-883E)Note 3 Class 2 Typical Electrical/Optical Characteristics at T A = 5°C, If = 5mA Note Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max ( λ D, nm) Min. Typ. Max. Max. Typ. C460XB500-S3500-A 3.0 3.5 4.0 2 21 C470XB500-S3000-A 3.0 3.5 4.0 2 22 C505XB500-S2000-A 3.0 3.5 4.0 2 30 C527XB500-S1500-A 3.0 3.5 4.0 2 35 Mechanical Specifications CxxxXB500-S000-A Description Dimension Tolerance P-N Junction Area (μm) 448 x 448 ± 25 Top Area (μm) 325 x 325 ± 25 Bottom Area (μm) 500 x 500 ± 50 Chip Thickness (μm) 250 ± 25 Au Bond Pad Diameter (μm) 120 ± 10 Au Bond Pad Thickness (μm) 1.2 ± 0.5 Back Contact Metal Area (μm) 376 x 376 ± 25 Back Contact Metal Options/Thickness (μm) 1.7 ± 0.3 Notes: Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 125 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. XB500™ chips are shipped with the junction side up, requiring die transfer prior to die attach. Specifications are subject to change without notice. 1. 2. 3. 4. 5. 6. 7. |
Số phần tương tự - CXXXXB500-SXX00-A |
|
Mô tả tương tự - CXXXXB500-SXX00-A |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |