công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
CXXXMB290-SXX00 bảng dữ liệu(PDF) 2 Page - Cree, Inc |
|
CXXXMB290-SXX00 bảng dữ liệu(HTML) 2 Page - Cree, Inc |
2 / 7 page Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree, Inc. 2 CPR3CK Rev. C Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at T A = 25°C Notes &3 CxxxMB290-Sxx00 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM)Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Class 2 Typical Electrical/Optical Characteristics at T A = 25°C, If = 20 mA Note 3 Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max. ( λ D, nm) Min. Typ. Max. Max. Typ. C460MB290-Sxx00 2.9 3.3 3.7 2 21 C470MB290-Sxx00 2.9 3.3 3.7 2 22 C505MB290-S0600 2.9 3.3 3.9 2 30 C527MB290-S0500 2.9 3.3 3.9 2 35 Mechanical Specifications CxxxMB290-Sxx00 Description Dimension Tolerance P-N Junction Area (μm) 250 x 250 ± 25 Top Area (μm) 300 x 300 ± 25 Bottom Area (μm) 200 x 200 ± 25 Chip Thickness (μm) 250 ± 25 Au Bond Pad Diameter (μm) 112 ± 20 Au Bond Pad Thickness (μm) 1.2 ± 0.5 Backside Metal Diameter (μm) 104 ± 20 Notes: Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E. Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 μm. Specifications are subject to change without notice. 1. 2. 3. 4. 5. |
Số phần tương tự - CXXXMB290-SXX00 |
|
Mô tả tương tự - CXXXMB290-SXX00 |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |