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TDA1001BT bảng dữ liệu(PDF) 8 Page - NXP Semiconductors |
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TDA1001BT bảng dữ liệu(HTML) 8 Page - NXP Semiconductors |
8 / 13 page December 1982 8 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT Notes to application information 1. The interference suppression and noise feedback control thresholds can be determined by R13 or a capacitive voltage divider at the input of the high-pass filter and they are defined by the following formulae: Vi(tr) = (1 + R13/RS) × Vi(tr)O in which RS = 2 kΩ; Vni = (1 + R13/RS) × VniO in which RS = 2 kΩ. 2. The suppression pulse duration is determined by C11 = 2,2 nF and R11 = 6,8 k Ω. 3. The characteristic of the noise feedback control is determined by R12 (and R10). 4. The feedback control of the interference suppression threshold at higher repetition frequencies is determined by R10 (and R12). 5. The 19 kHz generator can be adjusted with R7-16 (and R7-8). Adjustment is not required if components with small tolerances are used e.g. ∆R < 1% and ∆C < 2%. 6. Measuring conditions: The peak output noise voltage (Vno m, CCITT filter) shall be measured at the output with a de-emphazing time T = 50 µs (R = 5 kΩ, C = 10 nF); the reference value of 0 dB is Vo int with the 19 kHz generator short-circuited (pin 7 grounded). Noise threshold feedback control (notes 1 and 3) Noise input voltage (r.m.s. value) f = 120 kHz sinewave for V12-9 = 300 mV at R13 = 0 Ω Vni(rms) 2,3 3,3 4,3 mV at R13 = 2,7 k Ω Vni(rms) − 8,2 − mV for V12-9 = 425 mV (Vi(tr)O + 3 dB) at R13 = 0 Ω Vni(rms) − 7,3 − mV at R13 = 2,7 k Ω Vni(rms) − 16,5 − mV for V12-9 = 560 mV (Vi(tr)O + 20 dB) at R13 = 0 Ω Vni(rms) 33 45 57 mV at R13 = 2,7 k Ω Vni(rms) − 107 − mV Amplification control voltage by interference intensity (note 4) Vi(rms) = 50 mV; f = 19 kHz; Vi(tr)M = 300 mV; r.m.s. value at repetition frequency fr = 1 kHz Vo6(rms) 49 − 56 mV at repetition frequency fr = 16 kHz Vo6(rms) 45 − 65 mV PARAMETER SYMBOL MIN. TYP. MAX. UNIT |
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