1N5817 – 1N5819

1 of 4

© 2006 Won-Top Electronics

Pb

1N5817 – 1N5819

1.0A SCHOTTKY BARRIER DIODE

Features

!

Schottky Barrier Chip

!

Guard Ring Die Construction for

Transient Protection

!

High Current Capability

A

B

A

!

Low Power Loss, High Efficiency

!

High Surge Current Capability

!

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

C

D

Mechanical Data

!

Case: DO-41, Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 0.34 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

!

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1N5817

1N5818

1N5819

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

20

30

40

V

RMS Reverse Voltage

14

21

28

V

Average Rectified Output Current

(Note 1)

1.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

25

A

Forward Voltage

0.450

0.750

0.550

0.875

0.60

0.90

V

Peak Reverse Current

At Rated DC Blocking Voltage

1.0

10

mA

Typical Junction Capacitance (Note 2)

110

pF

Typical Thermal Resistance Junction to Lead (Note 1)

15

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

WTE

POWER SEMICONDUCTORS

DO-41

Dim

Min

Max

A

25.4

—

B

4.06

5.21

C

0.71

0.864

D

2.00

2.72

All Dimensions in mm