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D01605T-472 bảng dữ liệu(PDF) 2 Page - Monolithic Power Systems

tên linh kiện D01605T-472
Giải thích chi tiết về linh kiện  1MHz, 800mA Synchronous Step-Down Converter
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nhà sản xuất  MPS [Monolithic Power Systems]
Trang chủ  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

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MP2105 – 1MHz 800mA SYNCHRONOUS STEP-DOWN CONVERTER
MP2105 Rev. 1.2
www.MonolithicPower.com
2
8/19/2005
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2005 MPS. All Rights Reserved.
TM
PACKAGE REFERENCE
Part Number*
Package
Temperature
MP2105DJ
TSOT23-5
–40
°C to +85°C
* For Tape & Reel, add suffix –Z (eg. MP2105DJ–Z)
For Lead Free, add suffix –LF (eg. MP2105DJ–LF–Z)
ABSOLUTE MAXIMUM RATINGS (1)
VIN to GND .................................. –0.3V to +6.5V
VSW to GND........................... –0.3V to VIN +0.3V
VFB, VEN to GND.......................... –0.3V to +6.5V
Junction Temperature.............................+150
°C
Lead Temperature ..................................+260
°C
Storage Temperature .............–65
°C to +150°C
Recommended Operating Conditions
(2)
Supply Voltage VIN............................. 2.5V to 6V
Output Voltage VOUT .......................... 0.6V to 6V
Operating Temperature .............–40
°C to +85°C
Thermal Resistance
(3)
θJA
θJC
TSOT23-5.............................. 220 .... 110..
°C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The device is not guaranteed to function outside of its
operating conditions.
3) Measured on approximately 1” square of 1 oz copper.
ELECTRICAL CHARACTERISTICS (4)
VIN = VEN = 3.6V, TA = +25°C, unless otherwise noted.
Parameter
Symbol Condition
Min
Typ
Max
Units
Supply Current
VEN = VIN, VFB = 0.65V
440
600
µA
Shutdown Current
VEN = 0V, VIN = 6V
0.10
1
µA
IN Undervoltage Lockout
Threshold
Rising Edge
2.15
2.30
2.40
V
IN Undervoltage Lockout
Hysteresis
55
mV
TA = +25°C
0.588
0.600
0.612
Regulated FB Voltage
VFB
–40°C ≤ TA ≤ +85°C
0.582
0.600
0.618
V
FB Input Bias Current
VFB = 0.65V
–50
0.5
+50
nA
PFET On Resistance
ISW = 100mA
0.42
NFET On Resistance
ISW = –100mA
0.26
SW Leakage Current
VEN = 0V, VIN = 6V,
VSW = 0V or 6V
–1
+1
µA
PFET Current Limit
Duty Cycle = 100%,
Current Pulse Width < 1ms
1.2
1.6
2.1
A
Oscillator Frequency
fOSC
0.85
1.05
1.25
MHz
Thermal Shutdown Trip
Threshold
145
°C
EN Trip Threshold
–40°C ≤ TA ≤ +85°C
0.3
0.96
1.5
V
EN Input Current
VEN = 0V to 6V
–1
+1
µA
Notes:
4) 100% production test at +25°C. Specifications over the temperature range are guaranteed by design and characterization.
TOP VIEW
EN
GND
SW
1
2
3
5
4
FB
IN
MP1557_PD01_TSOT23-5


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