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BAT74 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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BAT74 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 Sep 05 2 Philips Semiconductors Product specification Schottky barrier double diode BAT74 FEATURES • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION Planar Schottky barrier double diode. Two separate dies encapsulated in a SOT143B small plastic SMD package. MARKING PINNING TYPE NUMBER MARKING CODE BAT74 L41 PIN DESCRIPTION 1 cathode (k1) 2 cathode (k2) 3 anode (a2) 4 anode (a1) Fig.1 Simplified outline (SOT143B), pin configuration and symbol. handbook, halfpage 43 2 1 Top view MAM194 2 3 4 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in reverse operation and the other is in forward operation at the same moment, total device current is max. 200 mA. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms 600 mA Ptot total power dissipation Tamb ≤ 25 °C; see Fig.2 − 230 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C Double diode operation VR continuous reverse voltage − 30 V series connection − 60 V IF continuous forward current − 110(1) mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 200 mA |
Số phần tương tự - BAT74_01 |
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Mô tả tương tự - BAT74_01 |
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