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MC33486ADHR2 bảng dữ liệu(PDF) 7 Page - Freescale Semiconductor, Inc

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Giải thích chi tiết về linh kiện  Dual High-Side Switch for H-Bridge Applications
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Analog Integrated Circuit Device Data
Freescale Semiconductor
7
33486A
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 9.0 V VBAT 16 V, -40°C TJ 150°C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TJ = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
OVERLOAD PROTECTION
High-Side Overcurrent Shutdown Delay (7)
tILIM
3.0
20
µs
Low-Side Over Load Detection (VOUT-GND) Shutdown Delay
(8)
tOUT-FAULT
3.0
10
µs
OUTPUT TIMING
High-/Low-Speed Mode to Low-/High-Speed Mode Transition Pulse Width
tSMOD
150
250
350
µs
Gate Low-Side Rise Time in High Speed Mode
From 10% to 90% VOUT, Load = 3.3 nF and 10 Ω
tPSRLS
3.6
µs
Gate Low-Side Fall Time in High Speed Mode
From 90% to 10% VOUT, Load = 3.3 nF and 10 Ω
tNSRLS
0.25
µs
HIGH-SPEED MODE
High-Side Positive Slew Rate
From 10% to 65% VOUT, Load = 3.0 Ω
tHR
10
V/
µs
High-Side Negative Slew Rate
From 90% to 35% VOUT, Load = 3.0 Ω
tHF
40
V/
µs
High-Side Turn-On Delay Time
To 10% VOUT, Load = 3.0 Ω
tHDON
2.5
µs
High-Side Turn-Off Delay Time
To 90% VOUT, Load = 3.0 Ω
tHDOFF
1.5
µs
LOW-SPEED MODE
High-Side Maximum Output Positive Slew Rate
From 10% to 65% VOUT, Load = 3.0 Ω
tLR
1.0
V/
µs
High-Side Maximum Output Negative Slew Rate
From 90% to 35% VOUT, Load = 3.0 Ω
tLF
0.5
V/
µs
High-Side Turn On Delay TIme
To 10% VOUT, Load = 3.0 Ω
tLDON
10
µs
High-Side Turn Off Delay Time
To 90% VOUT, Load = 3.0 Ω
tLOFF
80
µs
Notes
7.
Time between fault occurrence and output shutdown.
8.
Time between fault occurrence and gate low-side (GLS) shutdown.


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