NE33284A

NE33284A LINEAR MODEL

Parameters

2 V, 10 mA

2 V, 20 mA

2 V, 30 mA

g

73 mS

97 mS

104 mS

t

5 pSec

5 pSec

5.5 pSec

RDS

210 ohms

156 ohms

140 ohms

MODEL RANGE

Frequency:

0.1 to 20 GHz

Bias:

Date:

7/2/96

Parameter

Units

capacitance

picofarads

inductance

nanohenries

resistance

ohms

conductance

millisiemans

UNITS

SCHEMATIC

BIAS DEPENDENT MODEL PARAMETERS

0.001

CGD_PKG

CHIP

RG

LG

CCD_PKG

CCD_PKG

CCD_PKG

LG_PKG

RG_PKG

GATE

RD

RDS

g

t

f=281GHz

RS_PKG

0.2

LS_PKG

0.12

RS

0.19

CDS

LD

LD_PKG

CCD_PKG

0.3

0.13

0.24

0.05

0.2

0.1

0.01

CSD_PKG

SOURCE

RD_PKG

DRAIN

CDG

CDC

CGS

GGS

1e_5

RI

0.52

0.04

0.22

0.05

0.14

0.01

CSG_PKG

0.16

0.5

0.5

0.28

CCG_PKG

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RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

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DATA SUBJECT TO CHANGE WITHOUT NOTICE