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NE24200 bảng dữ liệu(PDF) 1 Page - NEC |
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NE24200 bảng dữ liệu(HTML) 1 Page - NEC |
1 / 4 page FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz •LG = 0.25 µm, WG = 200 µm ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED) DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate results in lower noise figure and high associated gain for space applications. NEC's stringent quality assurance and test procedures as- sure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) NE24200 PART NUMBER NE24200 PACKAGE OUTLINE 00 (CHIP) SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT1 Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz dB 0.35 f = 12 GHz dB 0.6 0.7 GA1 Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz dB 16.0 f = 12 GHz dB 10.0 11.0 P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA dBm 9.5 VDS = 2 V, IDS = 20 mA dBm 11.0 G1dB Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA dB 11.8 VDS = 2 V, IDS = 20 mA dB 12.8 IDSS Saturated Drain Current at VDS = 2 V, VGS = 0 V mA 15 40 70 VP Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA V -2.0 -0.8 -0.2 gm Transconductance at VDS = 2 V, IDS = 10 mA mS 45 60 IGSO Gate to Source Leakage Current at VGS = -3 V µA 0.5 10 RTH(CH-C)2 Thermal Resistance (Channel-to-Case) °C/W 260 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. GA NF 3 2.5 2 1.5 1 0.5 0 24 21 18 15 12 9 6 1 10 20 30 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA Frequency, f (GHz) California Eastern Laboratories |
Số phần tương tự - NE24200 |
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Mô tả tương tự - NE24200 |
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