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NE24200 bảng dữ liệu(PDF) 1 Page - NEC

tên linh kiện NE24200
Giải thích chi tiết về linh kiện  ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
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nhà sản xuất  NEC [NEC]
Trang chủ  http://www.nec.com/
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NE24200 bảng dữ liệu(HTML) 1 Page - NEC

  NE24200_00 Datasheet HTML 1Page - NEC NE24200_00 Datasheet HTML 2Page - NEC NE24200_00 Datasheet HTML 3Page - NEC NE24200_00 Datasheet HTML 4Page - NEC  
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FEATURES
• VERY LOW NOISE FIGURE:
NF = 0.6 dB typical at f = 12 GHz
• HIGH ASSOCIATED GAIN:
GA = 11.0 dB typical at f = 12 GHz
•LG = 0.25
µm, WG = 200 µm
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
(SPACE QUALIFIED)
DESCRIPTION
The NE24200 is a pseudomorphic Hetero-Junction FET chip
that utilizes the junction between Si-doped AlGaAs and
undoped InGaAs to create a two-dimensional electron gas
layer with very high electron mobility. This device features
mushroom shaped TiAl gates for decreased gate resistance
and improved power handling capabilities. The mushroom
gate results in lower noise figure and high associated gain for
space applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
NE24200
PART NUMBER
NE24200
PACKAGE OUTLINE
00 (CHIP)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NFOPT1
Optimum Noise Figure at VDS = 2 V, IDS = 10 mA
f = 4 GHz
dB
0.35
f = 12 GHz
dB
0.6
0.7
GA1
Associated Gain at VDS = 2 V, IDS = 10 mA
f = 4 GHz
dB
16.0
f = 12 GHz
dB
10.0
11.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
dBm
9.5
VDS = 2 V, IDS = 20 mA
dBm
11.0
G1dB
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
dB
11.8
VDS = 2 V, IDS = 20 mA
dB
12.8
IDSS
Saturated Drain Current at VDS = 2 V, VGS = 0 V
mA
15
40
70
VP
Pinch-Off Voltage at VDS = 2 V, IDS = 100
µA
V
-2.0
-0.8
-0.2
gm
Transconductance at VDS = 2 V, IDS = 10 mA
mS
45
60
IGSO
Gate to Source Leakage Current at VGS = -3 V
µA
0.5
10
RTH(CH-C)2
Thermal Resistance (Channel-to-Case)
°C/W
260
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
GA
NF
3
2.5
2
1.5
1
0.5
0
24
21
18
15
12
9
6
1
10
20
30
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
Frequency, f (GHz)
California Eastern Laboratories


Số phần tương tự - NE24200_00

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